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| inchange semiconductor isc product specification isc silicon npn power transistor BU705D description collector-emitter sustaining voltage- : v ceo(sus) = 700v (min) high switching speed built-in integrated efficiency diode applications designed for use in horizontal def lection circuits of tv receivers. absolute maximum ratings(t a =25 ) symbol parameter value unit v ces collector- emitter voltage(v be = 0) 1500 v v ceo collector-emitter voltage 700 v v ebo emitter-base voltage 5 v i c collector current- continuous 2.5 a i cm collector current-peak t p <2ms 4 a i b b base current- continuous 2 a i bm base current-peak t p <2ms 4 a p c collector power dissipation @ t c =25 75 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.67 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BU705D electrical characteristics t c =25 unless otherwise specified symbo l parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma ; i b = 0;l= 25mh 700 v v (br)ebo emitter-base breakdown voltage i e = 10ma ; i c = 0 6 v v ce (sat) collector-emitter saturation voltage i c = 2a; i b = 0.9a b 5 v v be (sat) base-emitter saturation voltage i c = 2a; i b = 0.9a b 1.3 v i ces collector cutoff current v ce = v ces max ; v be = 0 v ce = v ces max ; v be = 0; t c =125 0.15 1 ma i ebo emitter cutoff current v eb = 5v ; i c = 0 1 ma h fe dc current gain i c = 2a ; v ce = 5v 2.25 v ecf c-e diode forward voltage i f = 3a 1.8 v c ob output capacitance i e = 0; v cb = 10v; f test = 0.1mhz 65 pf f t current-gain?bandwidth product i c = 0.1a; v ce = 5v; f test = 5mhz 7 mhz switching times t stg storage time 10 s t f fall time i c = 2a ;i b( end ) = 0.9a; l b = 25 h 0.7 s isc website www.iscsemi.cn 2 |
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